2sC4742 silicon npn triple diffused application character display horizontal deflection output feature high breakdown voltage v ces = 1500 v built-in damper diode type outline to-3p 1 2 3 1. base
2. collector
(flange)
3. emitter i d 1 2 3
2sC4742 2 absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage v ces 1500 v emitter to base voltage v ebo 6v collector current i c 6a collector peak current i c(peak) 7a collector surge current i c(surge) 16 a collector power dissipation p c * 1 50 w junction temperature tj 150 c storage temperature tstg C55 to +150 c c to e diode forward current i d 7a note: 1. value at t c = 25c. electrical characteristics (ta = 25c) item symbol min typ max unit test conditions emitter to base breakdown voltage v (br)ebo 6vi e = 400 ma, i c = 0 collector cutoff current i ces 500 a v ce = 1500 v, r be = 0 dc current transfer ratio h fe 25 v ce = 5 v, i c = 1 a collector to emitter saturation voltage v ce(sat) 2.0 v i c = 5 a, i b = 1.25 a base to emitter saturation voltage v be(sat) 1.5 v i c = 5 a, i b = 1.25 a c to e diode forward voltage v ecf 2.0 v i f = 6 a fall time t f 0.4 s i cp = 5 a, i b1 = 1 a, i b2 = C2 a
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